首页> 外文OA文献 >Effect of O2/Ar flow ratio and post-deposition annealing on the structural, optical and electrical characteristics of SrTiO3 thin films deposited by RF sputtering at room temperature
【2h】

Effect of O2/Ar flow ratio and post-deposition annealing on the structural, optical and electrical characteristics of SrTiO3 thin films deposited by RF sputtering at room temperature

机译:O 2 / Ar流量比和沉积后退火对室温下射频溅射沉积SrTiO 3 薄膜的结构,光学和电学特性的影响

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

SrTiO (STO) thin films have been prepared by reactive RF magnetron sputtering on Si (100) and UV fused silica substrates at room temperature. The effect of oxygen flow on film characteristics was investigated at a total gas flow of 30 sccm, for various O/O + Ar flow rate ratios. As-deposited films were annealed at 700 °C in oxygen atmosphere for 1 h. Post-deposition annealing improved both film crystallinity and spectral transmittance. Film microstructure, along with optical and electrical properties, was evaluated for both as-deposited and annealed films. Abroad photoluminescence emission was observed within the spectral range of 2.75-3.50 eV for all STO thin films irrespective of their deposition parameters. Upon annealing, the optical band gap of the film deposited with 0% O concentration slightly blue-shifted, while the other samples grown at higher oxygen partial pressure did not show any shift. Refractive indices (n) (at 550 nm) were in the range of 2.05 to 2.09, and 2.10 to 2.12 for as-deposited and annealed films, respectively. Dielectric constant values (at 100 kHz) within the range of 30-66 were obtained for film thicknesses less than 300 nm, which decreased to ~ 30-38 after post-deposition annealing. © Published by Elsevier B.V.
机译:SrTiO(STO)薄膜是通过在室温下在Si(100)和UV熔融石英衬底上进行反应性射频磁控溅射制备的。对于各种O / O + Ar流量比,研究了总流量为30 sccm的氧气流量对薄膜特性的影响。将沉积的薄膜在氧气气氛中于700°C退火1小时。沉积后退火改善了膜的结晶度和光谱透射率。对沉积的和退火的薄膜均评估了薄膜的微观结构以及光学和电学性质。对于所有STO薄膜,无论其沉积参数如何,都在2.75-3.50 eV的光谱范围内观察到了国外的光致发光发射。退火后,以0%O浓度沉积的薄膜的光学带隙略微蓝移,而在较高氧分压下生长的其他样品则未显示任何移位。沉积膜和退火膜的折射率(n)(在550 nm处)分别在2.05至2.09和2.10至2.12的范围内。对于小于300 nm的膜厚度,获得的介电常数值(在100 kHz时)在30-66之间,沉积后退火后,介电常数值减小到〜30-38。 ©Elsevier B.V.发布

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号